Features
Center gate
Hermetic metal case with ceramic insulator
(Glass-metal seal over 1200V)
International standard case TO-209AC (TO-94)
Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
I
T(AV)
110
A
@ T
C
90
C
I
T(RMS)
175
A
I
TSM
@
50Hz
2700
A
@ 60Hz
2830
A
I
2
t
@
50Hz
36.4
KA
2
s
@ 60Hz
33.2
KA
2
s
V
DRM
/V
RRM
400 to 1600
V
t
q
typical
100
s
T
J
- 40 to 125
C
Parameters
ST110S
Units
Major Ratings and Characteristics
case style
TO-209AC (TO-94)
110A
PHASE CONTROL THYRISTORS
Stud Version
ST110S SERIES
1
Bulletin I25167 rev. C 03/03
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ST110S Series
2
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Bulletin I25167 rev. C 03/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= T
J
max
V
V
mA
04
400
500
ST110S
08
800
900
20
12
1200
1300
16
1600
1700
I
T(AV)
Max. average on-state current
110
A
180 conduction, half sine wave
@ Case temperature
90
C
I
T(RMS)
Max. RMS on-state current
175
A
DC @ 85C case temperature
I
TSM
Max. peak, one-cycle
2700
t = 10ms
No voltage
non-repetitive surge current
2830
t = 8.3ms
reapplied
2270
t = 10ms
100% V
RRM
2380
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
36.4
t = 10ms
No voltage
Initial T
J
= T
J
max.
33.2
t = 8.3ms
reapplied
25.8
t = 10ms
100% V
RRM
23.5
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
364
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.52
V
I
pk
= 350A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Typical latching current
1000
0.90
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.79
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
1.81
(I >
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST110S
Units Conditions
0.92
(I >
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= 25C, anode supply 12V resistive load
A
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
, t
r
1s
of turned-on current
T
J
= T
J
max, anode voltage
80% V
DRM
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
,
T
J
= 25C
I
TM
= 100A, T
J
= T
J
max, di/dt
= 10A/s, V
R
= 50V
dv/dt
= 20V/s, Gate 0V 100
,
t
p
= 500s
Parameter
ST110S
Units Conditions
t
d
Typical delay time
2.0
Switching
t
q
Typical turn-off time
100
s
500
A/s
ST110S Series
3
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Bulletin I25167 rev. C 03/03
dv/dt
Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
500
V/s
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST110S
Units Conditions
20
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque, 10%
15.5
Non lubricated threads
(137)
14
Lubricated threads
(120)
wt
Approximate weight
130
g
Parameter
ST110S
Units Conditions
0.195
DC operation
0.08
Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
P
GM
Maximum peak gate power
5
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
1
T
J
= T
J
max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
2.0
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J
= - 40C
to trigger
mA
T
J
= 25C
T
J
= 125C
V
GT
DC gate voltage required
T
J
= - 40C
to trigger
V
T
J
= 25C
T
J
= 125C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST110S
Units Conditions
20
5.0
Triggering
V
GD
DC gate voltage not to trigger
0.25
V
T
J
= T
J
max
TYP.
MAX.
180
-
90
150
40
-
2.9
-
1.8
3.0
1.2
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
C
K/W
Nm
(lbf-in)
Case style
TO - 209AC (TO-94)
See Outline Table
V
T
J
= T
J
max, t
p
5ms
ST110S Series
4
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Bulletin I25167 rev. C 03/03
Ordering Information Table
5
3
4
ST
11
0
S
16
P
0
V
7
6
8
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Device Code
1
2
180
0.035
0.025
120
0.041
0.042
90
0.052
0.056
K/W
T
J
= T
J
max.
60
0.076
0.079
30
0.126
0.127
Conduction angle Sinusoidal conduction Rectangular conduction Units
Conditions
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
S = Compression bonding Stud
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
-
P = Stud base 1/2"-20UNF-2A threads
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)
1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
8
-
V = Glass-metal seal (only up to 1200V)
None = Ceramic housing (over 1200V)
ST110S Series
5
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Bulletin I25167 rev. C 03/03
Fast-on Terminals
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
Outline Table
C.S. 0.4 mm 2
10 (0.39)
RED SHRINK
RED CATHODE
RED SILICON RUBBER
4.3 (0.17) DIA
21
(
0
.
8
3)
1
2
.
5
(
0
.
49)
M
AX.
157
(
6
.
18)
17
0 (
6
.
6
9
)
(.0006 s.i.)
8.5 (0.33) DIA.
16.5 (0.65) MAX.
MA
X
.
70
(
2
.
7
5)
M
I
N
.
CERAMIC HOUSING
22.5 (0.88) MAX. DIA.
2
9
(
1
.1
4
)
MA
X.
SW 27
C.S. 16mm 2
FLEXIBLE LEAD
(.025 s.i.)
2.6 (0.10) MAX.
WHITE SHRINK
20
(
0.
79
) M
IN
.
29.5 (1.16)
MAX.
1/2"-20UNF-2A
9.
5
(0
.3
7)
M
IN
.
WHITE GATE
215 (8.46)
C.S. 0.4 mm 2
215 (8.46)
10 (0.39)
WHITE SHRINK
RED SHRINK
RED CATHODE
RED SILICON RUBBER
4.3 (0.17) DIA
21
(
0
.
8
3)
1
2
.5
(
0
.
4
9
)
MA
X
.
15
7 (
6
.
1
8
)
17
0
(
6
.
6
9
)
(.0006 s.i.)
GLASS METAL SEAL
8.5 (0.33) DIA.
16.5 (0.65) MAX.
23.5 (0.93) MAX. DIA.
MA
X
.
29
(
1
.
1
4
)
M
A
X
.
70 (
2
.
7
5
)
M
I
N
.
C.S. 16mm 2
FLEXIBLE LEAD
(.025 s.i.)
2.6 (0.10) MAX.
20
(0
.7
9)
M
IN
.
29.5 (1.16) MAX.
1/2"-20UNF-2A
SW 27
9.
5
(0
.3
7)
M
IN
.
WHITE GATE
AMP. 280000-1
REF-250
ST110S Series
6
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Bulletin I25167 rev. C 03/03
Fig. 4 - On-state Power Loss Characteristics
80
90
100
110
120
130
0
20
40
60
80
100
120
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
mp
e
r
a
t
u
r
e
(
C)
30
60
90
120
180
Average On-state Current (A)
Conduction Angle
ST110S Series
R (DC) = 0.195 K/ W
thJC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
80
90
100
110
120
130
0
20 40 60 80 100 120 140 160 180
DC
30
60
90
120
180
Average On-state Current (A)
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
Ca
s
e
T
e
mp
e
r
a
t
u
r
e
(
C
)
Conduction Period
ST110S Series
R (DC) = 1.95 K/ W
thJC
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
R
=
0.1
K/
W
- D
elt
a R
th
SA
0.2
K/
W
0.3
K/
W
0.4
K/W
0.6 K
/ W
0.8 K
/ W
1 K/W
0.5
K/W
1.2 K/W
0
20
40
60
80
100
120
140
160
180
200
220
0
20 40 60 80 100 120 140 160 180
DC
180
120
90
60
30
RMS Limit
Conduction Period
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
Average On-state Current (A)
ST110S Series
T = 125C
J
25
50
75
100
125
Maximum Allowable Ambient Temperature (C)
R
= 0
.1
K
/W
- D
e
lta
R
0.2
K
/W
0.3
K/
W
0.4
K/
W
0.5
K/
W
0.6
K/W
1 K/W
0.8 K
/ W
1.2 K/
W
th
SA
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
180
120
90
60
30
RMS Limit
Conduction Angle
M
a
x
i
mu
m A
v
e
r
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
Average On-state Current (A)
ST110S Series
T = 125C
J
Fig. 3 - On-state Power Loss Characteristics
ST110S Series
7
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Bulletin I25167 rev. C 03/03
1000
1200
1400
1600
1800
2000
2200
2400
1
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
P
e
a
k
H
a
l
f
S
i
n
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
ST110S Series
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
0.01
0.1
1
10
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
P
e
a
k
H
a
l
f
S
i
n
e
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
e
n
t
(
A
)
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
J
RRM
ST110S Series
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
Z
(
K
/
W
)
ST110S Series
Steady State Value
R = 0.195 K/ W
(DC Operation)
thJC
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
10
100
1000
10000
0.5
1.5
2.5
3.5
4.5
Tj = 25C
Tj = 125C
ST110S Series
ST110S Series
8
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Bulletin I25167 rev. C 03/03
Fig. 9 - Gate Characteristics
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
Tj
=
2
5
C
Tj
=
1
2
5
C
Tj
=
-
4
0
C
(1) (2)
(3)
Instantaneous Gate Current (A)
I
n
s
t
an
tan
e
o
u
s
G
a
te
V
o
l
t
ag
e
(
V
)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/ dt : 20V, 10ohms; tr<=1 s
tr<=1 s
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST110S Series
Rectangular gate pulse
(4)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
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